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| t t TSL257 HIGH SENSITIVITY LIGHT TO VOLTAGE CONVERTER TAOS023A - JULY 2000 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D D Photodiode, Operational Amplifier, and Feedback Components High Sensitivity Single Voltage Supply Operation (2.7 V to 5.5 V) Low Noise (200 Vrms Typ to 1 kHz) Rail-to-Rail Output High Power-Supply Rejection (35 dB at 1 kHz) Compact 3-Leaded Plastic Package PACKAGE (FRONT VIEW) 1 2 3 GND VDD OUT Description The TSL257 is a high-sensitivity low-noise light-to-voltage optical converter that combines a photodiode and a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly proportional to light intensity (irradiance) on the photodiode. The TSL257 has a transimpedance gain of 320 M. The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead clear plastic sidelooker package with an integral lens. Functional Block Diagram - + Voltage Output Terminal Functions TERMINAL NAME GND OUT VDD NO. 1 3 2 Output voltage Supply voltage DESCRIPTION Ground (substrate). All voltages are referenced to GND. www.taosinc.com Texas Advanced Optoelectronic Solutions Inc. 800 Jupiter Road, Suite 205 S Plano, TX 75074 S (972) 673-0759 t t Copyright E 2001, TAOS Inc. 1 TAOS023A - JULY 2000 TSL257 HIGH SENSITIVITY LIGHT TO VOLTAGE CONVERTER Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Duration of short-circuit current at (or below) 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25C to 85C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25C to 85C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND. Recommended Operating Conditions MIN Supply voltage, VDD Operating free-air temperature, TA 2.7 0 MAX 5.5 70 UNIT V C Electrical Characteristics at VDD = 5 V, TA = 25C, p = 470 nm, RL = 10 k (unless otherwise noted) (see Notes 2 and 3) PARAMETER VD VOM VO VD Dark voltage Maximum output voltage swing Output voltage Temperature coefficient of dark voltage (VD) Ee = 0 VDD = 4.5 V, VDD = 4.5 V, TA = 0C to 70C p = 428 nm, see Notes 4 and 8 Ne Irradiance responsivity p = 470 nm, see Notes 5 and 8 p = 565 nm, see Notes 6 and 8 p = 645 nm, see Notes 7 and 8 PSRR IDD Power supply rejection ratio yj Supply current fac = 100 Hz, see Note 9 fac = 1 kHz, see Note 9 Ee = 1.54 W/cm2, p = 470 nm, Note 5 No Load RL = 10 k 4 1.6 TEST CONDITIONS MIN 0 4.49 4.2 2 -15 1.18 1.30 1.58 1.68 55 35 1.9 3.5 dB dB mA V/(W/cm V/( W/cm2) 2.4 V V V/C TYP MAX 15 UNIT mV Ee = 1.54 W/cm2, p = 470 nm, Note 5 NOTES: 2. Measured with RL = 10 k between output and ground. 3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source. 4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength p = 428 nm, spectral halfwidth 1/2 = 65 nm. 5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength p = 470 nm, spectral halfwidth 1/2 = 35 nm. 6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength p = 565 nm, spectral halfwidth 1/2 = 28 nm. 7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength p = 645 nm, spectral halfwidth 1/2 = 25 nm. 8. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0. 9. Power supply rejection ratio PSRR is defined as 20 log (VDD(f)/VO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V. Copyright E 2001, TAOS Inc. t www.taosinc.com 2 t TSL257 HIGH SENSITIVITY LIGHT TO VOLTAGE CONVERTER TAOS023A - JULY 2000 Switching Characteristics at VDD = 5 V, TA = 25C, p = 470 nm, RL = 10 k (unless otherwise noted) PARAMETER tr tf ts Output pulse rise time, 10% to 90% of final value Output pulse fall time, 10% to 90% of final value Output settling time to 1% of final value Integrated noise voltage TEST CONDITIONS See Note 10 and Figure 1 See Note 10 and Figure 1 See Note 10 and Figure 1 f = dc to 1 kHz f = 10 Hz Vn Output noise voltage, rms g, f = 100 Hz f = 1 kHz NOTE 10: Switching characteristics apply over the range VO = 0.1 V to 4.5 V. Ee = 0 Ee = 0 Ee = 0 Ee = 0 MIN TYP 160 150 330 200 6 6 7 V/Hz rms MAX 250 250 UNIT s s s Vrms PARAMETER MEASUREMENT INFORMATION VDD Pulse Generator LED (see Note A) TSL257 1 TEST CIRCUIT - + RL Output (see Note B) 10% 90% 90% 10% 2 Ee Input 3 Output tr tf VOLTAGE WAVEFORM NOTES: A. The input irradiance is supplied by a pulsed InGaN light-emitting diode with the following characteristics: p = 470 nm, tr < 1 s, tf < 1 s. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi 1 M, Ci 20 pF. Figure 1. Switching Times www.taosinc.com t Copyright E 2001, TAOS Inc. t 3 TAOS023A - JULY 2000 TSL257 HIGH SENSITIVITY LIGHT TO VOLTAGE CONVERTER TYPICAL CHARACTERISTICS POWER SUPPLY REJECTION RATIO vs FREQUENCY 80 70 60 50 40 30 20 10 0 500 700 900 - Wavelength - nm 1100 10 102 103 104 f - Frequency - Hz 105 106 PHOTODIODE SPECTRAL RESPONSIVITY 1.6 TA = 25C 1.4 1.2 Relative Responsivity 1.0 0.8 0.6 0.4 0.2 0 300 Normalized to 470 nm Power Supply Rejection Ratio -- dB Figure 2 Figure 3 DARK VOLTAGE vs FREE-AIR TEMPERATURE 10 9 8 V D- Dark Voltage - mV 7 6 5 4 3 2 1 0 0 10 30 50 20 40 60 TA - Free-Air Temperature - C 70 Normalized Response VDD = 5 V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -90 -70 NORMALIZED RESPONSE vs ANGULAR DISPLACEMENT -50 -30 -10 10 30 50 Angular Displacement - 5 70 90 Figure 4 Figure 5 Copyright E 2001, TAOS Inc. t www.taosinc.com 4 t TSL257 HIGH SENSITIVITY LIGHT TO VOLTAGE CONVERTER TAOS023A - JULY 2000 MECHANICAL DATA The TSL257 is implemented in a clear 3-leaded package with a molded focusing lens. 0.072 (1,84) 0.057 (1,44) 0.032 (0,80) 0.016 (0,40) R 0.035 (0,90) 0.071 (1,8) 0.110 (2,80) 0.189 (4,80) 0.173 (4,40) 0.189 (4,80) 0.173 (4,40) 0.165 (4,20) 0.150 (3,80) 0.071 (1,80) 0.016 (0,40) 0.079 (2,00) 0.039 (1,00) 0.029 (0,75) 0.102 (2,6) 0.027 (0,70) 0.026 (0,65) 0.630 (16,00) 0.531 (13,50) 0.018 (0,45) 0.079 (2,00) 0.079 (2,00) 0.018 (0,45) Figure 6. Package Configuration NOTES: A. B. C. D. E. All linear dimensions are in inches (millimeters). This drawing is subject to change without notice. All dimensions apply before solder dip. Package body is a clear nonfilled optically transparent material Index of refraction of clear plastic is 1.55. www.taosinc.com t Copyright E 2001, TAOS Inc. t 5 TAOS023A - JULY 2000 TSL257 HIGH SENSITIVITY LIGHT TO VOLTAGE CONVERTER PRODUCTION DATA -- information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters. NOTICE Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER'S RISK. TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are trademarks of Texas Advanced Optoelectronic Solutions Incorporated. Copyright E 2001, TAOS Inc. t www.taosinc.com 6 t |
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